Arthur Gossard

National Medal of Technology and Innovation

Physics

For innovation, development, and application of artificially structured quantum materials critical to ultrahigh performance semiconductor device technology used in today’s digital infrastructure.

For innovation, development, and application of artificially structured quantum materials critical to ultrahigh performance semiconductor device technology used in today’s digital infrastructure.

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Birth
June 18, 1935
Age Awarded
79
Country of Birth
USA
Key Contributions
Research in the physics of ultra-thin semiconductors through molecular beam epitaxy (MBE)
Co-discovered the quantum confined Stark effect and the fractional quantization of the Hall effect
Awarded by
Barack Obama
Education
University of California, Berkeley
Harvard University
Areas of Impact
Communication & Information
Energy & Environment
Affiliations
University of California, Santa Barbara
I

If you’re reading this on a computer, semiconductors make it possible.

These chemical compounds – found in tiny components of computer chips – conduct electricity better than insulators, such as rubber, but worse than metals like copper.

In the devices that power our lives, these materials control the flow of electricity, and thereby information.

Arthur Gossard, a professor at University of California, Santa Barbara, helped revolutionize this process, developing ultra-thin layers of semiconductors such as gallium arsenide using “molecular beam epitaxy.”

The technique, which takes place inside a vacuum, involves firing beams of hot molecules into a surface to form thin, crystal layers.

A result of Gossard’s research, technology companies can create microscopic layers of matter – just a few atoms thick – which allow for a faster flow of electrons, making devices from mobile phones to solar panels faster and more energy efficient.

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